Библиографический источник

ULSI Devices

ed. by C. Y. Chang , S. M. Sze

Заглавие:

ULSI Devices

Место издания:

New York

Издатель:

Wiley

Дата издания:
Объём:

i, 729 pages

ISBN:

9780471240679

Сведения о содержании:

1. Introduction / C. Y. Chang and S. M. Sze -- Pt. I. Device Fundamentals. 2. Bipolar Transistor Fundamentals / E. Kasper. 3. MOSFET Fundamentals / P. Wong. 4. Device Miniaturization and Simulation / S. Banerjee and B. Streetman -- Pt. II. Device Building Blocks and Advanced Device Structures. 5. SOI and Three-Dimensional Structures / J. P. Colinge. 6. The Hot-Carrier Effect / B. Doyle. 7. DRAM and SRAM / S. Shichijo. 8. Nonvolatile Memory / J. Caywood and G. Derbenwich -- Pt. III. Circuit Building Blocks and System-in-Chip Concept. 9. CMOS Digital and Analog Building Block Circuits for Mixed-Signal Applications / D. Pehlke and M.-C. F. Chang. 10. High-Speed or Low-Voltage, Low-Power Operations / I. C. Chen and W. Liu. 11. System-on-Chip Concepts / M. Pelgrom -- App. B. International System of Units (SI Units) -- App. C. Unit Prefixes -- App. D. Greek Alphabet -- App. E. Physical Constants -- App. F. Properties of Si at 300 K

Язык текста:

Английский

Дата публикации:
Дата публикации: